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FFD10UP20S
—
Ultrafast Diode
www.fairchildsemi.com
3
?2008 Fairchild Semiconductor Corporation
FFD10UP20S Rev. C1
Typical Performance Characteristics
40 80 120 160 200
0.1
10
1
10
100
1000
TC
= 25
oC
TC
= 100
oC
Reverse Current , I
R
[
nA
]
Reverse Voltage, VR
[V]
0.1
0.0 0.5 1.0 1.5 2.0
1
10
TC
= 100
oC
Forward Current, I
F
[A]
Forward Voltage, V
F
[V]
TC
= 25
oC
50
Figure 3. Typical Forward Voltage Drop
vs. Forward Current
Figure 4. Typical Reverse Current vs.
Reverse Voltage
Figure 5. Typical Junction Capacitance
Figure 6. Typical Reverse Recovery Time
vs. di
F/dt 40
10-1
100
101
102
0
30
60
90
120
150
Capacitances , Cj [pF]
Reverse Voltage, VR[V]
Typical Capacitance
at 0V = 129 pF
20
50 100 150 200 250
25
30
35
TC
= 25
oC
TC
= 100
oC
Reverse Recovery Time, t
rr
[ns]
diF/dt [A/?s]
IF
= 10A
Figure 7. Typical Reverse Recovery
Current vs. di
F/dt6
Figure 8. Forward Current Derating Curve
50 100 150 200 250di
F/dt [A/?s]
0
1
2
3
4
5
TC
= 25
oC
TC
= 100
oC
Reverse Recovery Current, I
rr
[A]
IF
= 10A
0
25 50 75 100 125 150
4
8
12
16
20
24
28
32
Average Forward Current, I
F(AV)
[A]
Case temperature, TC
[oC]
DC
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